kw.\*:("Diode semiconducteur")
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Current oscillations in semiconductor diodes under streaming instability conditionsGRUZINSKIS, V; REKLAITIS, A.Electronics Letters. 1983, Vol 19, Num 18, pp 733-734, issn 0013-5194Article
Zur anomalen Temperaturabhängigkeit der Durchlassspannung einiger Halbleiterdioden = Variation thermique anormale de la tension d'amorçage de diodes semiconductricesTHOM, F.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 239-244, issn 0014-4924Article
Precision engineered semimetal-semiconductor diodes for mm-wave and THz rectifiersZIMMERMAN, Jeramy; BROWN, Elliott; GOSSARD, Art et al.DRC : Device research conference. 2004, pp a6-a7, isbn 0-7803-8284-6, 1VolConference Paper
Solid-state lighting: The future looks bright : Opening the grid across continentsPATEL, Prachi.MRS bulletin. 2011, Vol 36, Num 9, pp 678-680, issn 0883-7694, 3 p.Article
Modelling of diode forward recovery characteristics using a modified charge-control equationTSENG, K. J.International journal of electronics. 1998, Vol 84, Num 5, pp 437-444, issn 0020-7217Article
Effet du profil de la distribution des impuretés dans la couche de base d'une structure diode à semiconducteur sur l'écoulement du courant en régime balistique ou quasi balistiqueBANNOV, N. A; RYZHIJ, V. I.Mikroèlektronika (Moskva). 1984, Vol 13, Num 2, pp 148-151, issn 0544-1269Article
A novel β-SiC/Si heterojunction backward diodeHWANG, J. D; FANG, Y. K; CHEN, K. H et al.IEEE electron device letters. 1995, Vol 16, Num 5, pp 193-195, issn 0741-3106Article
ELECTRON-BOMBARDED SEMICONDUCTOR: (EBS) SWITCHMACDONALD RI; HUM RH.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 609-611; BIBL. 9 REF.Article
RECOMBINATION INSTABILITIES IN SEMICONDUCTORS DOPED WITH DEEP TWO-LEVEL TRAPSANTOGNETTI P; CHIABRERA A; RIDELLA S et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4676-4680; BIBL. 17 REF.Serial Issue
ON METAL-SEMICONDUCTOR DIODES FABRICATED BY ELECTRODEPOSITION TECHNIQUESGHOSH K; CHOWDHURY NKD.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 5; PP. 615-624; BIBL. 16 REF.Article
SUR UNE POSSIBILITE D'EVALUER LES PROPRIETES DE RECOMBINAISON DES CONTACTS ET LEUR EFFET SUR LA CARACTERISTIQUE DE DIODES A SEMICONDUCTEURSGEJFMAN EM; GREKHOV IV; KOSTINA LS et al.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 2; PP. 386-391; BIBL. 6 REF.Article
DIRECT DETECTION OF MICROWAVE SIGNALS BY SOLID STATE DIODES.GREEN HE.1977; ELECTR. ENGNG TRANS.; AUSTRAL.; DA. 1977; VOL. 13; NO 2; PP. 63-68; BIBL. 7 REF.Article
EFFECT OF JUNCTION HEATING ON THE MAGNETOCURRENT IN SEMICONDUCTOR DIODESSWAMI R; LAL D; TANTRY BAP et al.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 34; NO 5; PP. 629-632; BIBL. 2 REF.Serial Issue
High-speed high-voltage current diodesBERLIN, A. S; LEZZHOV, Yu. F; TISHCHENKOV, N. T et al.Russian electrical engineering. 1996, Vol 67, Num 12, pp 13-14, issn 1068-3712Article
Semiconductor diode lasers : a new laser light source in ophthalmologyBALLES, M. W; PULIAFITO, C. A.International ophthalmology clinics. 1990, Vol 30, Num 2, pp 77-83, issn 0020-8167Article
OPTIMISATION ET REALISATION D'UNE PERIPHERIE PLANAR HAUTE TENSION A POCHE = OPTIMIZATION AND IMPLEMENTATION OF A HIGH VOLTAGE PLANAR PERIPHERY POCKET TYPENgo, Le Thuy; Guillemot, Nadine.1997, 172 p.Thesis
New features of electrically detected magnetic resonance in silicon p-n diodesHORNMARK, E. T; LYON, S. A; POINDEXTER, E. H et al.Solid state communications. 2000, Vol 116, Num 5, pp 279-282, issn 0038-1098Article
The width of the non-steady state transition region in deep level impurity measurementsBROTHERTON, S. D.Solid-state electronics. 1983, Vol 26, Num 10, pp 987-990, issn 0038-1101Article
Effects of thermal annealing on interface states density and ideality factor in Ni/Si(111) Schottky diodesSAHAY, P. P; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1991, Vol 29, Num 5, pp 357-361, issn 0019-5596Article
Trace analysis of microvolume gas samples: dynamic considerations for analytical accuracyMUCHA, J. A.Analytical chemistry (Washington, DC). 1985, Vol 57, Num 9, pp 1963-1969, issn 0003-2700Article
Minority carrier lifetimes using compensated differential open circuit voltage decayGREEN, M. A.Solid-state electronics. 1983, Vol 26, Num 11, pp 1117-1122, issn 0038-1101Article
Superfast epitaxial: diffusional diodesPOTAPCHUK, V. A; MESHKOV, O. M.Russian electrical engineering. 1996, Vol 67, Num 12, pp 21-25, issn 1068-3712Article
Impédance d'une diode longue pour la double injection de porteurs modifiant peu la quasi-neutralitéBLOKHIN, I. K; KHOLODNOV, V. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1761-1765, issn 0015-3222Article
EFFET D'ACCUMULATION DE LA CHARGE EN PROVENANCE DES PORTEURS MINORITAIRES SUR LES PARAMETRES DES DIODES SEMICONDUCTRICES DANS DES DISPOSITIFS RADIOPHYSIQUES. MECANISMES DE DIFFUSION DU REDRESSEMENT DANS UN SCHEMA DE DIODE SEMICONDUCTRICEDAMGOV VN; RZHEVKIN KS.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 613-625; ABS. ENG; BIBL. 7 REF.Article
CALCUL DES PROCESSUS TRANSITOIRES DANS UNE DIODE SEMICONDUCTRICE.GORODETSKIJ SM; LITOVSKIJ MA; RIVKIND V YA et al.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 7; PP. 1514-1519; BIBL. 6 REF.Article